Investigation of silicon surface passivation by silicon nitride film deposition
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Investigation of silicon surface passivation by silicon nitride film deposition annual report, 9/1/83 - 8/31/84, JPL contract no. 956614

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Published by Joint Center for Graduate Study, University of Washington, [Washington, D.C.?, National Aeronautics and Space Administration, National Technical Information Service, distributor in Richland, Wash, Springfield, Va .
Written in English

Subjects:

  • Silicon nitride.

Book details:

Edition Notes

Statementby Larry C. Olsen.
SeriesNASA contractor report -- 175693., NASA contractor report -- NASA CR-175693.
ContributionsUnited States. National Aeronautics and Space Administration.
The Physical Object
FormatMicroform
Pagination1 v.
ID Numbers
Open LibraryOL15386518M

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Kim et al. have studied the performance of the solar cell using silicon nitride film as an antireflection coating for the reduction of the surface reflections. The optimized deposition of silicon nitride film could yield 17% conversion efficiency. Patil et al. have reported the deposition of silicon nitride films using e-beam evaporation and Cited by: 4. B. Hallam, B. Tjahjono, S. Wenham, Effect of PECVD silicon oxynitride film stoichiometry on the surface passivation of silicon wafers, in: Proceedings of the 24th European Photovoltaic Solar Energy Conference, Hamburg, , pp. –Cited by: This paper reports investigation on passivation properties of thermally deposited thin HfO2 films by atomic layer deposition system (ALD) on silicon surface. As-deposited pristine film (∼8 nm. @article{osti_, title = {The effect of hydrogen-plasma and PECVD-nitride deposition on bulk and surface passivation in string-ribbon silicon solar cells}, author = {Ruby, D S and Wilbanks, W L and Fleddermann, C B and Hanoka, J I}, abstractNote = {We have investigated whether an in-situ hydrogen or ammonia rf-plasma treatment prior to a PECVD-nitride deposition would promote bulk defect.

Surface passivation of AlGaN/GaN device by silicon nitride (SiN) deposition using surface-wave plasma enhanced chemical vapor deposition (SPECVD) technique which is Cited by: 1. Tantalum oxide/silicon nitride: A negatively charged surface passivation stack for silicon solar cells Appl. Phys. Lett. , (); / Surface passivation of nano-textured silicon solar cells by atomic layer deposited Al2O3 films J. Appl. Phys. , (); /Cited by: cells by out diffusion from hydrogenated silicon nitride films iii) investigation of the growth kinetics and passivation of hydrogenated polycrystalline Si grown by hot wire chemical vapor deposition. Work on hydrogen-passivated silicon nitride synthesis was applied to solar cell passivation in collaboration with industrial partners at. cells—chiefly silicon nitride SiN x deposited by plasma en-hanced chemical vapor deposition PECVD —is well known to substantially influence the degree of surface passivation achieved. PECVD SiN x usually contains a significant density of positive charge 12typically several 10 cm−2. This posi-Cited by:

silicon surface passivation by silicon n1trdde deposition university of washington larry c. olsen objectives and approach oejectlves to investigate the use of pecvo silicon nitride for passivatio)(of silicon surfaces. 0 to investigate measurement techniques for surface recomeination velocity. PECVD Silicon Nitride Film Property and Pre-deposition Surface Treatment Effects on MIMCAP Reliability for InGaP/GaAs HBT Applications Tong Wang Mount Bethel Road, Warren, NJ , [email protected], x Keywords: MIMCAP, PECVD, reliability, PCT, silicon nitride, deposition Abstract. eld (DCSF) PECVD system and hydrogenated amorphous silicon nitride (SiN x) in rf PECVD system forms a dual layer stack on c-Si, which results in an excellent passivation of the surface and an anti-re ection coating. Response Surface Methodology is used in this work to optimize the deposition con-ditions of SiN x. Optimization of the response Author: Dmitri Stepanov. silicon wafer during Al 2 O 3 deposition. This type of remote-plasma deposition technique is known to create almost no plasma damage at the surface, and is hence well suited for an excellent silicon surface passivation. “High-rate spatial ALD, PECVD, and reactive sputtering have an enourmous potential for a transfer of Al 2 O 3 intoFile Size: KB.